IRF-634资料datasheet下载贸易商意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF-634	文件：326.43 Kbytes Page：14 Pages	N-channel 250V - 0.38廓 - 8A TO-220 /TO-220FP Mesh Overlay??Power MOSFET 文件：326.43 Kbytes 页数：14 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
IRF-634	文件：300 bytes Page：1 Pages	N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET	ST 意法半导体	ST
IRFI634	文件：649.97 Kbytes Page：9 Pages	250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan 文件：649.97 Kbytes 页数：9 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
IRFI634B	文件：649.97 Kbytes Page：9 Pages	250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan 文件：649.97 Kbytes 页数：9 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
IRFI634G	文件：297.18 Kbytes Page：6 Pages	POWER MOSFET Through-Hole Packags TO-220 FullPak (Fully Isolated) 文件：297.18 Kbytes 页数：6 Pages	IRF	IRF

更多IRF-634供应商更新时间2026-3-18 14:00:00