Single N-Channel 2.5V Specified PowerTrench MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：FDS6570；Package：SOP-8；30V N-Channel MOSFET

Features • Low gate charge (47nC typical). • Fast switching speed. •High performance trench technology for extremely low RDS(ON) • High power and current handling capability. (VGS = 4.5V) VDS (V) =30V ID = 15 A RDS(ON)

文件：393.9 Kbytes 页数：6 Pages

UMW

友台半导体

单 N 沟道，2.5V 指定，PowerTrench® MOSFET，20V，15A，7.5mΩ

此N沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 •15 A，20 V\n•低栅极电荷（典型值47nC）\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力;

ONSEMI

安森美半导体

RF AMPLIFIER MODEL

文件：77.65 Kbytes 页数：1 Pages

APITECH

I/O TTL INTEGRATION

I/O TTL INTEGRATION

文件：282 Kbytes 页数：7 Pages

Holtek

合泰

2-CHANNEL FLOPPY DISK READ/WRITE CIRCUITS

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：196.39 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体