丝印：FDS6570；Package：SOP-8；30V N-Channel MOSFET

Features • Low gate charge (47nC typical). • Fast switching speed. •High performance trench technology for extremely low RDS(ON) • High power and current handling capability. (VGS = 4.5V) VDS (V) =30V ID = 15 A RDS(ON)

文件：393.9 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：FDS6570；Package：SOP-8；30V N-Channel MOSFET

Features • Low gate charge (47nC typical). • Fast switching speed. •High performance trench technology for extremely low RDS(ON) • High power and current handling capability. (VGS = 4.5V) VDS (V) =30V ID = 15 A RDS(ON)

文件：393.9 Kbytes 页数：6 Pages

UMW

友台半导体

30V N-Channel MOSFET

Features • Low gate charge (47nC typical). • Fast switching speed. •High performance trench technology for extremely low RDS(ON) • High power and current handling capability. (VGS = 4.5V) VDS (V) =30V ID = 15 A RDS(ON)

文件：393.9 Kbytes 页数：6 Pages

UMW

友台半导体

Single N-Channel 2.5V Specified PowerTrench MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba

文件：201.71 Kbytes 页数：8 Pages

Fairchild

仙童半导体