丝印：FDS6612A；Package：SOP-8；30V N-Channel MOSFET

Features Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 8.4A RDS(ON)

文件：479.23 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：FDS6612A；Package：SOP-8；30V N-Channel MOSFET

Features Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 8.4A RDS(ON)

文件：479.23 Kbytes 页数：7 Pages

UMW

友台半导体

EVALUATION KIT

INTRODUCING LX1710/1711 AUDIOMAX Thank you for your interest in the latest generation of AudioMAX products. The enclosed LXE1710 evaluation board is a fully functional mono amplifier designed to demonstrate the “new and improved” Switching Class-D Power Amplifier IC from Linfinity Microsemi. The

文件：339.7 Kbytes 页数：18 Pages

Microsemi

美高森美

Single N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and

文件：246.99 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Single N-Channel, Logic-Level, PowerTrench MOSFET

文件：164.38 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Single N-Channel, Logic-Level, PowerTrench MOSFET

文件：164.38 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel 20V (D-S) MOSFET

文件：1.00896 Mbytes 页数：9 Pages

VBSEMI

微碧半导体