丝印：FDS6690；Package：SOP-8；30V N-Channel MOSFET

Features Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 11 A RDS(ON)

文件：461.58 Kbytes 页数：7 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：FDS6690；Package：SOP-8；30V N-Channel MOSFET

Features Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 11 A RDS(ON)

文件：461.58 Kbytes 页数：7 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description This N Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with compar

文件：203.64 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual Notebook Power Supply N-Channel PowerTrench SyncFET?

General Description The FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986S contains two unique 30V, N-channel, logic l

文件：200.17 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Single N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and

文件：457.24 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

30V N-Channel PowerTrench SyncFET

General Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky dio

文件：143.43 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

30V N-Channel PowerTrench짰 SyncFET?

General Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky dio

文件：759.67 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 13 A RDS(ON)

文件：1.42204 Mbytes 页数：5 Pages

Bychip

百域芯

30V N-Channel PowerTrench짰 SyncFET?

General Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky dio

文件：759.67 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

30V N-Channel PowerTrench SyncFET

General Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky dio

文件：143.43 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司