丝印：FDS6892A；Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：180.75 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDS6892A；Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：180.75 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：80.1 Kbytes 页数：5 Pages

Fairchild

仙童半导体

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：180.75 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：78.83 Kbytes 页数：5 Pages

Fairchild

仙童半导体