丝印：FDS89161LZ；Package：SO-8；Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ

Features Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package CDM ESD

文件：399.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDS89161LZ；Package：SO-8；Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ

Features Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package CDM ESD

文件：399.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Max rDS(on) = 105 m廓 at VGS = 10 V, ID = 2.7 A

文件：251.14 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司