丝印：FDS8958；Package：SOP-8；NP-Channel MOSFET

Features N-Channel VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON)

文件：587.09 Kbytes 页数：9 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：FDS8958A；Package：SO-8；Dual N & P-Channel PowerTrench횘 MOSFET

文件：543.09 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDS8958；Package：SOP-8；NP-Channel MOSFET

Features N-Channel VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON)

文件：587.09 Kbytes 页数：9 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：FDS8958A；Package：SO-8；Dual N & P-Channel PowerTrench횘 MOSFET

文件：543.09 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

NP-Channel MOSFET

Features N-Channel VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON)

文件：587.09 Kbytes 页数：9 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

Dual N and P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. F

文件：362.45 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual N & P-Channel PowerTrench MOSFET

文件：233.48 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual N & P-Channel PowerTrenchO MOSFET

文件：526.11 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual N & P-Channel PowerTrench MOSFET

文件：804.01 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual N and P-Channel PowerTrench MOSFET

文件：311.74 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司