FDS8958A中文资料仙童半导体数据手册PDF规格书

General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

特性 Features

• Q1: N-Channel

7.0A, 30V RDS(on) = 0.028W @ VGS = 10V

RDS(on) = 0.040W @ VGS = 4.5V

• Q2: P-Channel

-5A, -30V RDS(on) = 0.052W @ VGS = -10V

RDS(on) = 0.080W @ VGS = -4.5V

• Fast switching speed

• High power and handling capability in a widely used surface mount package