丝印：FDS9958；Package：SO-8；Dual P-Channel PowerTrench짰 MOSFET -60V, -2.9A, 105m廓

文件：447.33 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FDS9958；Package：SO-8；Dual P-Channel PowerTrench짰 MOSFET -60V, -2.9A, 105m廓

文件：447.33 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual P-Channel PowerTrench짰 MOSFET

General Description These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance Features ● Max r

文件：261.399 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel PowerTrench짰 MOSFET

文件：555.65 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel 6 0-V (D-S) MOSFET

文件：1.02921 Mbytes 页数：9 Pages

VBSEMI

微碧半导体