丝印：FDS8638；Package：SO-8；N-Channel PowerTrench® MOSFET 40 V, 18 A, 4.3 mΩ

Features Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s

文件：373.21 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDS8638；Package：SO-8；N-Channel PowerTrench® MOSFET 40 V, 18 A, 4.3 mΩ

Features Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s

文件：373.21 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 40 V, 18 A, 4.3 m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ■ Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID =

文件：286.36 Kbytes 页数：6 Pages

Fairchild

仙童半导体