丝印：FDS8884；Package：SOP-8；30V N-Channel MOSFET

Features Low gate charge VDS (V) = 30V ID = 8.5 A (VGS = 10V) RDS(ON)

文件：532.33 Kbytes 页数：7 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：FDS8884；Package：SOP-8；30V N-Channel MOSFET

Features Low gate charge VDS (V) = 30V ID = 8.5 A (VGS = 10V) RDS(ON)

文件：532.33 Kbytes 页数：7 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

N-Channel PowerTrench MOSFET 30V, 8.5A, 23mOhm

General Descriptions This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features ■ Max rDS

文件：309.73 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司