丝印：FDS6912A；Package：SOP-8；30V Dual N-Channel MOSFET

Features • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 6A RDS(ON)

文件：387.35 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：FDS6912A；Package：SO-8；Dual N-Channel Logic Level PowerTrenchÒ MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：224.24 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDS6912A；Package：SOP-8；30V Dual N-Channel MOSFET

Features • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 6A RDS(ON)

文件：387.35 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：FDS6912A；Package：SO-8；Dual N-Channel Logic Level PowerTrenchÒ MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：224.24 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：222.94 Kbytes 页数：4 Pages

Fairchild

仙童半导体

Dual N-Channel Logic Level PowerTrench MOSFET

文件：121.37 Kbytes 页数：5 Pages

Fairchild

仙童半导体

Dual N-Channel Logic Level PowerTrench MOSFET

文件：121.37 Kbytes 页数：5 Pages

Fairchild

仙童半导体