FDS6690A

Dual Notebook Power Supply N-Channel PowerTrench SyncFET?

GeneralDescription TheFDS6986SisdesignedtoreplacetwosingleSO-8MOSFETsandSchottkydiodeinsynchronousDC:DCpowersuppliesthatprovidevariousperipheralvoltagesfornotebookcomputersandotherbatterypoweredelectronicdevices.FDS6986Scontainstwounique30V,N-channel,logicl

FDS6690A

Single N-Channel, Logic Level, PowerTrenchTM MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand

FDS6690A

丝印：FDS6690；Package：SOP-8；30V N-Channel MOSFET

Features Fastswitchingspeed Lowgatecharge Highperformancetrenchtechnologyforextremely lowRDS(ON) Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=30V ID=11A RDS(ON)

FDS6690A

单 N 沟道，逻辑电平，Power Trench® MOSFET，30V，11A，12.5mΩ

该N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。; •11 A，30 V\n•RDS(ON) = 12.5 mΩ @ VGS = 10 V\n•RDS(ON) = 17.0 mΩ @ VGS = 4.5 V\n•快速开关速度\n•低栅极电荷\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力\n;

FDS6690AS

N 沟道，PowerTrench® SyncFET™，30V，10A，12mΩ

FDS6690AS设计用于替代同步DC:DC电源中的一个单SO-8 MOSFET和肖特基二极管。 此30V MOSFET设计用于最大限度地提高功率转换效率，提供低RDS(ON)和低栅极电荷。 FDS6690AS包含使用飞兆半导体单片SyncFET技术的集成肖特基二极管。 FDS6690AS在同步整流器中作为低端开关的性能与FDS6690A并联一个肖特基二极管的性能相似。; •10A，30V\n•RDS(ON) = 12 mΩ @ VGS = 10V\n•RDS(ON) = 15 mΩ @ VGS = 4.5V\n•包含SyncFET肖特基体二极管\n•低栅极电荷（典型值16 nC）。\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力\n;

FDS6690AS

30V N-Channel PowerTrench SyncFET

GeneralDescription TheFDS6690ASisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6690ASincludesanintegratedSchottkydio

FDS6690AS

30V N-Channel PowerTrench짰 SyncFET?

GeneralDescription TheFDS6690ASisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6690ASincludesanintegratedSchottkydio

FDS6690AS

N-Channel Enhancement Mode Power MOSFET

Features VDS=30V,ID=13A RDS(ON)

FDS6690AS_08

30V N-Channel PowerTrench짰 SyncFET?

GeneralDescription TheFDS6690ASisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6690ASincludesanintegratedSchottkydio

FDS6690AS_NL

30V N-Channel PowerTrench SyncFET

GeneralDescription TheFDS6690ASisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6690ASincludesanintegratedSchottkydio