丝印：FDS6682；Package：SOP-8；30V N-Channel MOSFET

Features · Low gate charge (22 nC typical) · High performance trench technology for extremely low RDS(ON) · High power and current handling capability (VGS = 10V) VDS (V) =30V ID = 14 A RDS(ON)

文件：435.17 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：FDS6682；Package：SOP-8；30V N-Channel MOSFET

Features · Low gate charge (22 nC typical) · High performance trench technology for extremely low RDS(ON) · High power and current handling capability (VGS = 10V) VDS (V) =30V ID = 14 A RDS(ON)

文件：435.17 Kbytes 页数：6 Pages

UMW

友台半导体

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(O

文件：139.98 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

30V N-Channel PowerTrench MOSFET

文件：119.48 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

30V N-Channel PowerTrench MOSFET

文件：119.48 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司