丝印：FDS6685；Package：SOP-8；-30V P-Channel MOSFET

Features Low gate charge (17nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability (VGS = 10V) VDS (V) = - 30V ID = -8.8 A R DS(ON)

文件：369.31 Kbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：FDS6685；Package：SOP-8；-30V P-Channel MOSFET

Features Low gate charge (17nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability (VGS = 10V) VDS (V) = - 30V ID = -8.8 A R DS(ON)

文件：369.31 Kbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

P-Channel Logic Level PowerTrenchTM MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and batte

文件：204.12 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司