IRC634PRF

HEXFET Power MOSFET

IRF634

PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A)

Description ThirdInternationalRectifierfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofParalleli

IRF634

N-CHANNEL250V-0.38ohm-8ATO-220/TO-220FPMESHOVERLAY??MOSFET

Description UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

IRF634

AdvancedPowerMOSFET

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=250V ♦LowerRDS(ON):0.327Ω(Typ.)

IRF634

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

IRF634

N-channelmosfettransistor

Features •WithTO-220package •Simpledriverequirements •Fastswitching •VDSS=250V;RDS(ON)≤0.45Ω;ID=8.1A •1.gate2.drain3.source

IRF634

N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET

IRF634

N-ChannelMOSFETTransistor

DESCRIPTION •DrainCurrent-ID=8.1A@TC=25°C •DrainSourceVoltage- :VDSS=250V(Min) •StaticDrain-SourceOn-Resistance :RDS(OD=0.45Ω(Max) •FastSwitchingSpeed •LowDriveRequirement APPLICATIONS •Highcurrent,highspeedswitching •Switchmodepowersupplies •DC-DCconv

IRF634

SEMICONDUCTORS

IRF634

PowerMOSFET