HEXFET Power MOSFET

文件：1.17673 Mbytes 页数：9 Pages

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N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

文件：333.68 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V ♦ Lower RDS(ON): 0.327Ω(Typ.)

文件：224.02 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)

Description Third International Rectifier from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleli

文件：171.6 Kbytes 页数：6 Pages

IRF