FDN302P

丝印：302D；Package：SOT23；P-Channel Enhancement-Mode MOS FETs

ProductSummary Vps=-20V,Ip=-3A Rosion)

FDN302P

丝印：302；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET

Features •–20V,–2.4A.RDS(ON)=55mΩ@VGS=–4.5V RDS(ON)=80mΩ@VGS=–2.5V •Fastswitchingspeed •Highperformancetrenchtechnologyforextremely lowRDS(ON) •SuperSOTTM-3provideslowRDS(ON)and30higher powerhandlingcapabilitythanSOT23inthesame footprint

FDN302P

丝印：302；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET

GeneralDescription ThisP-Channel2.5Vhasbeenoptimizedforpower managementapplicationswithawiderangeofgate drivevoltage(2.5V–12V). Applications •Powermanagement •Loadswitch •Batteryprotection Features •–20V,–2.4A.RDS(ON)=55mΩ@VGS=–4.5V RDS(ON)=

FDN302P

P-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesaruggedgateversionofFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagement applicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features •–20V,–2.4A.Rds(on)=0.055Ω@

FDN302P

P 沟道 2.5V 指定 PowerTrench® MOSFET -20V，-2.4A，55mΩ; •–20 A，–2.4 V。\n•RDS(ON) = 0.055 mΩ @ VGS = –4.5 V\n•RDS(ON) = 0.080 mΩ @ VGS = –2.5 V\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)\n•SuperSOT™-3提供低RDS(ON)，并且在同样的尺寸下，功率处理能力比SOT23高出30%\n;

此P沟道2.5V额定MOSFET采用稳固栅极版本的飞兆先进的PowerTrench工艺生产。 它已针对栅极驱动电压范围(2.5V – 12V)广泛的电源管理应用进行了优化。

FDN302P

Contains all support circuitry needed for the ADS1148/ADS1248;

FDN302P

Contains all support circuitry needed for the ADS1148/ADS1248

FDN302P

Contains all support circuitry needed for the ADS1146/ADS1246

FDN302P-NL

P-Channel 20-V (D-S) MOSFET