P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：198.2 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

P-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

FRJAE ASSEMBLY 6 POSITION & 8 POSITION WITH OR WITH OUT FERRITES SINGLE PORT HIGH TEMP MATERIAL

文件：117.17 Kbytes 页数：1 Pages

AMPHENOL

安费诺

Ultra Small, Low Power, 4 Data Lane, 2:1 Switch for MIPI, SuperSpeed USB, PCIe and DisplayPort

Description The FSA636 may be configured as a four data lane MIPI D−PHY, V2.1 switch or a three data lane MIPI C−PHY, V1.2 switch. This single pole, double throw (SPDT) switch is optimized for switching between both high speed and low power MIPI sources. The FSA636 is designed for the MIPI specif

文件：781.54 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Ultra Small, Low Power, 4 Data Lane, 2:1 Switch for MIPI, SuperSpeed USB, PCIe and DisplayPort

Description The FSA636 may be configured as a four data lane MIPI D−PHY, V2.1 switch or a three data lane MIPI C−PHY, V1.2 switch. This single pole, double throw (SPDT) switch is optimized for switching between both high speed and low power MIPI sources. The FSA636 is designed for the MIPI specif

文件：781.54 Kbytes 页数：7 Pages

ONSEMI

安森美半导体