P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

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Fairchild

仙童半导体

P 沟道，PowerTrench® MOSFET，逻辑电平，-30V，-3.6A，75mΩ

此P沟道逻辑电平MOSFET采用飞兆高级PowerTrench工艺生产。 它已针对电池的电源管理应用进行了优化。 •-3.6 A，-30 V\n•RDS(ON) = 75 mΩ @ VGS = 10 V\n•RDS(ON) = 125 mΩ @ VGS = -4.5 V\n•低栅极电荷（6.2nC，典型值）\n•高性能沟道技术可实现极低的rDS(on);

ONSEMI

安森美半导体

LINEAR INTEGRATED CIRCUIT

文件：185.12 Kbytes 页数：5 Pages

UTC

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WIDEBAND FIXED ATTENUATOR FAMILY, DC - 50 GHz

文件：345.26 Kbytes 页数：8 Pages

Hittite

WIDEBAND FIXED ATTENUATOR FAMILY

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