FDC654P中文资料仙童半导体数据手册PDF规格书
FDC654P规格书详情
General Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
特性 Features
■ -3.6 A, -30 V. RDS(ON) = 0.075 W @ VGS = -10 V RDS(ON) = 0.125 W @ VGS = -4.5 V.
■ SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
■ High density cell design for extremely low RDS(ON).
■ Exceptional on-resistance and maximum DC current capability.
产品属性
- 型号：
FDC654P
- 功能描述：
MOSFET SSOT-6 P-CH -30V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
onsemi |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
FAIRCHILD |
2016+ |
SOT-163 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
FAIR |
23+ |
NA |
20000 |
全新原装假一赔十 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
SOT163 |
154751 |
明嘉莱只做原装正品现货 |
询价 | ||
ONSEMI/安森美 |
25+ |
SOT-23-6 |
20300 |
ONSEMI/安森美原装特价FDC654P即刻询购立享优惠#长期有货 |
询价 | ||
FAIRCHILD/仙童 |
2026+ |
SOT23-6 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
ON/安森美 |
23+ |
SOT-163 |
50000 |
原装正品 支持实单 |
询价 | ||
ON |
18+21+ |
SOT23 |
30000 |
全新原装公司现货
|
询价 | ||
FAIRCHILD |
24+ |
原厂原封 |
6523 |
进口原装公司百分百现货可出样品 |
询价 |
