FDC653N中文资料PDF规格书
FDC653N规格书详情
General Description
This N-Channel enhancement mode power field effect transistors is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
■ 5 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V.
■ Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
■ High density cell design for extremely low RDS(ON).
■ Exceptional on-resistance and maximum DC current capability.
产品属性
- 型号:
FDC653N
- 功能描述:
MOSFET SSOT-6 N-CH 30V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
22+ |
SOT23-6 |
33944 |
只做原装进口现货 |
询价 | ||
ON/安森美 |
23+ |
SOT23-6 |
29316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
FAIRCHILD |
SOT23-6 |
256 |
正品原装--自家现货-实单可谈 |
询价 | |||
FAIRCHILD |
2002 |
SSOT-6 |
65000 |
原装正品假一罚万 |
询价 | ||
FAIRCHILD/仙童 |
2048+ |
SuperSOT-6(SSOT-6) |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
Fairchild |
1930+ |
N/A |
7383 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
收购IC |
1525+ |
SOT23-6 |
5083 |
长期现金收购原装IC |
询价 | ||
FAIRCHILD/仙童 |
22+ |
SOT23-6 |
57455 |
郑重承诺只做原装进口货 |
询价 | ||
ON/安森美 |
SuperSOT-6 |
12000 |
原装现货,长期供应,终端账期支持 |
询价 | |||
FAIRCHILD/仙童 |
24+ |
SOT23-6 |
154654 |
明嘉莱只做原装正品现货 |
询价 |