FDC653中文资料仙童半导体数据手册PDF规格书

General Description

This N-Channel enhancement mode power field effect transistors is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

特性 Features

■ 5 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V.

■ Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.

■ High density cell design for extremely low RDS(ON).

■ Exceptional on-resistance and maximum DC current capability.