N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applic

文件：70.75 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

N-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applic

文件：70.75 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

LM2655 2.5A High Efficiency Synchronous Switching Regulator

General Description The LM2655 is a current-mode controlled PWM step-down switching regulator. It has the unique ability to operate in synchronous or asynchronous mode. This gives the designer flexibility to choose between the high efficiency of synchronous operation, or the low solution cost

文件：803.77 Kbytes 页数：18 Pages

TI

德州仪器

N 沟道增强型场效应晶体管，30V，5A，35mΩ

这些N沟道增强模式功率场效应晶体管采用飞兆半导体专有的高单元密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低通态电阻而定制的。 此类器件特别适合笔记本电脑、便携电话、PCMICA卡等低电压应用及其他需要采用极小封装外形表面贴装封装、具有快速开关和低线内功率损耗的电池供电电路。 • 5 A，30 V\n• RDS(ON) = 0.035 Ω @ VGS = 10 V\n•RDS(ON) = 0.055 Ω @ VGS = 4.5 V\n•专有SuperSOTTM-6封装设计采用铜引脚架构，以获得出色的热性能和电气性能\n•高密度单元设计，可实现极低的RDS(ON)\n•出色的导通阻抗和最大DC电流能力;

ONSEMI

安森美半导体