双 N 沟道，PowerTrench® MOSFET，2.5V 指定，20V，3.0A，70mΩ

该双N沟道MOSFET特别为提高DC/DC转换器的整体效率而设计，采用同步或传统开关脉宽调制(PWM)控制器。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •3.0 A, 20 V\n•RDS(ON) = 70 mΩ @ VGS = 4.5 V\n•RDS(on) = 95 mΩ @ VGS = 2.5 V\n•低栅极电荷 \n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力;

ONSEMI

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Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features · 3.0

文件：76.33 Kbytes 页数：5 Pages

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RF LINEAR POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 – 2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network (PCN) base station and INMARSAT Standard M applications. • S

文件：111.54 Kbytes 页数：6 Pages

MOTOROLA

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NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor

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