N 沟道，PowerTrench® MOSFET，逻辑电平，30V，6.1A，27 mΩ

该N沟道逻辑电平MOSFET是低电压和电池电源应用的有效解决方案。 由于采用飞兆半导体先进的PowerTrench®工艺，该器件具有最低的通态电阻，可以优化功耗。 非常适合重视线路内功率损耗的应用。 •VGS = 10V，ID = 6.1A时，最大RDS(on) = 27mΩ\n•VGS = 4.5V，ID = 5.3A时，最大rDS(on) = 36 mΩ\n•SuperSOT™ -6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）。\n•符合RoHS标准;

ONSEMI

安森美半导体

Single N-Channel, Logic Level, PowerTrench짰 MOSFET 30V, 6.1A, 27m廓

文件：278.74 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

DC-DC Converter Applications

Features • Composite type composed of a ow ON-resistance N-channel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward-voltage Schottky barrier diode. Facilitates high-density mounting. • The FX855 is formed with 2 chips, one being equivalent to the 2SK1

文件：135.54 Kbytes 页数：4 Pages

SANYO

三洋

NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR

FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * Very low saturation voltage * Excellent hFE specified up to 10 Amps PARTMARKING DETAIL - FZT855 COMPLEMENTARY TYPE - FZT955

文件：516.12 Kbytes 页数：3 Pages

ZETEX

SOT223 NPN SILICON PLANAR

Features • BVCEO > 150V • IC = 5A high Continuous Collector Current • ICM = 10A Peak Pulse Current • Very Low Saturation Voltage VCE(sat)

文件：176.07 Kbytes 页数：3 Pages

DIODES

美台半导体