N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed. Features

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N-Channel PowerTrench® MOSFET

General Description\nThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC\nconverters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed. • 5.5 A, 30 V.  RDS(ON)= 30 mΩ@ VGS= 4.5 V\n                   RDS(ON)= 26 mΩ@ VGS= 10 V\n• High performance trench technology for extremely low RDS(ON)\n• Low gate charge (13 nC typical)\n• High power and current handling capability;

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N-Channel PowerTrench® MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC

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N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed. Features

文件：313.11 Kbytes 页数：8 Pages

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N-Channel PowerTrench MOSFET

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N-Channel PowerTrench MOSFET

文件：80.45 Kbytes 页数：5 Pages

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N 沟道，PowerTrench® MOSFET，30V，5.5A，26 mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •5.5 A，30 V。\n•RDS(on) = 30 mΩ @ VGS = 4.5 V\n•RDS(on) = 26 mΩ @ VGS = 10 V\n•高性能沟道技术可实现极低的RDS(ON)\n•低栅极电荷（典型值13nC）\n•高功率和高电流处理能力;

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