丝印：420；Package：SOT-26；20V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q13.0 A, 20V. RDS(ON)= 70 mW@ VGS

文件：102.58 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N- and P-Channel V (D-S) MOSFET

文件：1.13147 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N 和 P 沟道，PowerTrench® MOSFET，20V

这些N和P沟道MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 这些器件经过专门设计，能在极小的空间内实现优异的功率耗散，非常适合那些不宜采用更大更昂贵的SO-8和TSSOP-8封装的应用。 •Q1 3.0 A，20V\n•RDS(on) = 70 mΩ@ VGS = 4.5 V\n•RDS(on) = 95 mΩ @ VGS = 2.5 V\n•Q2 –2.2 A，20V。\n•RDS(on) = 125 mΩ@ VGS = -4.5 V\n•RDS(on) = 190 mΩ @ VGS = 2.5 V\n•低栅极电荷 \n•高性能沟道技术可实现极低的RDS(ON)\n•SuperSOT –6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）。;

ONSEMI

安森美半导体

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

文件：4.13074 Mbytes 页数：122 Pages

Intersil

Advanced Single Synchronous Buck Pulse-Width Modulation (PWM) Controller

Advanced Single Synchronous Buck Pulse-Width Modulation (PWM) Controller The ISL6420 makes simple work out of implementing a complete control and protection scheme for a highperformance DC/DC buck converter. Designed to drive N-channel MOSFETs in a synchronous rectified buck topology, the ISL6420

文件：525.19 Kbytes 页数：19 Pages

Intersil

Advanced Single Synchronous Buck Pulse-Width Modulation (PWM) Controller

Advanced Single Synchronous Buck Pulse-Width Modulation (PWM) Controller The ISL6420 makes simple work out of implementing a complete control and protection scheme for a high-performance DC/DC buck converter. Designed to drive N-channel MOSFETs in a synchronous rectified buck topology, the ISL642

文件：1.00822 Mbytes 页数：20 Pages

RENESAS

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