P-Channel 2.5V Specified PowerTrench?줞OSFET

P-Channel 2.5V Specified PowerTrench™ MOSFET

文件：269.68 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

20V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q13.0 A, 20V. RDS(ON)= 70 mW@ VGS

文件：102.58 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

丝印：420；Package：SOT-26；20V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q13.0 A, 20V. RDS(ON)= 70 mW@ VGS

文件：102.58 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

P-Channel 2.5V Specified PowerTrench?줞OSFET

P-Channel 2.5V Specified PowerTrench™ MOSFET

文件：269.68 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

P-Channel PowerTrench짰 MOSFET -20V, -4A, 100m廓

Features ■ Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A ■ Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A ■ Fast switching speed ■ Low gate charge(6.9nC typical) ■ High performance trench technology for extremely low rDS(on) ■ SuperSOTTM-6 package:small footprint(72 smaller than standard SO

文件：263.33 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

FDC642P P-Channel 2.5V specified PowerTrench MOSFET

Features ■ Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A ■ Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A ■ Fast switching speed ■ Low gate charge(6.9nC typical) ■ High performance trench technology for extremely low rDS(on) ■ SuperSOTTM-6 package:small footprint(72 smaller than standard SO

文件：132.99 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

丝印：FDC642P；Package：SSOT-6；MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features • Typ RDS(on) = 52.5 m at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 m at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOT−6 Package: Small Footprint (72 Smaller than S

文件：1.36533 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：FDC642P；Package：SSOT-6；MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features • Typ RDS(on) = 52.5 m at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 m at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOT−6 Package: Small Footprint (72 Smaller than S

文件：1.36533 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

N- and P-Channel V (D-S) MOSFET

文件：1.13147 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N 和 P 沟道，PowerTrench® MOSFET，20V

这些N和P沟道MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 这些器件经过专门设计，能在极小的空间内实现优异的功率耗散，非常适合那些不宜采用更大更昂贵的SO-8和TSSOP-8封装的应用。 •Q1 3.0 A，20V\n•RDS(on) = 70 mΩ@ VGS = 4.5 V\n•RDS(on) = 95 mΩ @ VGS = 2.5 V\n•Q2 –2.2 A，20V。\n•RDS(on) = 125 mΩ@ VGS = -4.5 V\n•RDS(on) = 190 mΩ @ VGS = 2.5 V\n•低栅极电荷 \n•高性能沟道技术可实现极低的RDS(ON)\n•SuperSOT –6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）。;

ONSEMI

安森美半导体