丝印：FDC642P；Package：SSOT-6；MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features • Typ RDS(on) = 52.5 m at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 m at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOT−6 Package: Small Footprint (72 Smaller than S

文件：1.36533 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features • Typ RDS(on) = 52.5 m at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 m at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOT−6 Package: Small Footprint (72 Smaller than S

文件：1.36533 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

ON/安森美
SOT-23-6

ON/安森美

上传：深圳市明嘉莱科技有限公司

Fairchild
SOT23-6

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

上传：深圳市创博伟业科技有限公司

ON/安森美
SOT-23-6

ON/安森美

上传：深圳市琅玥科技有限公司