P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well sui

文件：240.76 Kbytes 页数：9 Pages

Fairchild

仙童半导体

P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm

General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well

文件：484.34 Kbytes 页数：5 Pages

Fairchild

仙童半导体

P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well sui

文件：240.76 Kbytes 页数：9 Pages

Fairchild

仙童半导体

P-Channel 30-V (D-S) MOSFET

文件：1.00601 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 2.5V PowerTrench Specified MOSFET

文件：156.18 Kbytes 页数：5 Pages

Fairchild

仙童半导体

P-Channel 2.5V PowerTrench Specified MOSFET

文件：156.18 Kbytes 页数：5 Pages

Fairchild

仙童半导体

P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，43mΩ

此 P 沟道 2.5V 额定 MOSFET 采用飞兆半导体先进的 PowerTrench 工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。这些器件非常适合负载开关、电源管理、电池充电电路和 DC/DC 转换等电池电源应用。 •最大值 rDS(ON)=43 mΩ，条件是 VGS=-4.5 V、ID=-4.5 A\n•最大值 rDS(ON)=68 mΩ，条件是 VGS=-2.5 V、ID=-3.8 A\n•低栅极电荷（典型值8nC）。\n•高性能沟道技术可实现极低的 rDS(on)\n•SuperSOT™ -6 封装：小尺寸（比标准 SO¨C8 小 72%）超薄（1 mm 厚）。\n•符合 RoHS 标准\n•采用绿色封装材料生产。\n•无卤素;

ONSEMI

安森美半导体

P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，48mΩ

此N沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。这些器件非常适合电池供电应用：负载开关和功率管理、电池充电电路和DC/DC转换。 •–4.5 A, –20 V.RDS(ON) = 48 mΩ @ VGS = –4.5 VRDS(ON) = 65 mΩ @ VGS = –2.5 V\n•低栅极电荷（10 nC，典型值）\n• Low gate charge (10 nC typical)\n• High performance trench technology for extremely low RDS(ON)\n• SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick);

ONSEMI

安森美半导体