P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well sui

文件：240.76 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel 2.5V PowerTrench Specified MOSFET

文件：156.18 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel 30-V (D-S) MOSFET

文件：1.00601 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 2.5V PowerTrench Specified MOSFET

文件：156.18 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，48mΩ

此N沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。这些器件非常适合电池供电应用：负载开关和功率管理、电池充电电路和DC/DC转换。 •–4.5 A, –20 V.RDS(ON) = 48 mΩ @ VGS = –4.5 VRDS(ON) = 65 mΩ @ VGS = –2.5 V\n•低栅极电荷（10 nC，典型值）\n• Low gate charge (10 nC typical)\n• High performance trench technology for extremely low RDS(ON)\n• SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick);

ONSEMI

安森美半导体