FDC638P中文资料仙童半导体数据手册PDF规格书
FDC638P规格书详情
General Description
This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
特性 Features
· –4.5 A, –20 V.RDS(ON) = 48 mW @ VGS = –4.5 V
RDS(ON) = 65 mW @ VGS = –2.5 V
· Low gate charge (10 nC typical)
· High performance trench technology for extremely low RDS(ON)
· SuperSOT ™ –6 package: small footprint (72 smaller than standard SO-8; low profile (1mm thick)
产品属性
- 型号:
FDC638P
- 功能描述:
MOSFET SSOT-6 P-CH -20V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
24+ |
SOT23-6 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
询价 | ||
ON |
24+ |
TSOT-23-6 |
25000 |
ON全系列可订货 |
询价 | ||
FAIRCHILD |
2023+ |
SOT-163 |
50000 |
原装现货 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
SOT23-6 |
154544 |
明嘉莱只做原装正品现货 |
询价 | ||
FAIRCHILD |
11+ |
SOT23-6 |
654 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHILD |
24+/25+ |
113 |
原装正品现货库存价优 |
询价 | |||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
FSC |
2018+ |
SOT23-6 |
26976 |
代理原装现货/特价热卖! |
询价 | ||
Fairchild |
23+ |
NA |
6800 |
原装正品,力挺实单 |
询价 | ||
ONSEMI |
两年内 |
N/A |
15000 |
原装现货,实单价格可谈 |
询价 |