FDC633N中文资料仙童半导体数据手册PDF规格书
FDC633N规格书详情
General Description
This N-Channel enhancement mode power field effect transistors is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching,low in-line power loss and resistance to transients are needed in a very small outline surface mount package.
特性 Features
■ 5.2 A, 30 V. RDS(ON) = 0.042 W @ VGS = 4.5 V
RDS(ON) = 0.054 W @ VGS = 2.5 V.
■ SuperSOT™-6 package design using copper lead frame for
superior thermal and electrical capabilities.
■ High density cell design for extremely low RDS(ON).
■ Exceptional on-resistance and maximum DC current
capability.
产品属性
- 型号:
FDC633N
- 功能描述:
MOSFET SSOT-6 N-CH 30V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
2016+ |
SOT-163 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
FAIRCHIL |
23+ |
SOT23/6 |
20000 |
全新原装假一赔十 |
询价 | ||
ONSEMI/安森美 |
25+ |
SOT23-6 |
34688 |
ONSEMI/安森美全新特价FDC633N即刻询购立享优惠#长期有货 |
询价 | ||
ON/安森美 |
23+ |
TSOP-6 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
FAIRCHILD |
24+ |
SOT23-6 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
询价 | ||
FSC |
1822+ |
SOT-163 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
FSC |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
FSC/ON |
23+ |
原包装原封 □□ |
1226453 |
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存 |
询价 | ||
FAIRCHILD/仙童 |
18+ |
SOT23-6 |
15458 |
全新原装现货,可出样品,可开增值税发票 |
询价 | ||
Fairchildsemi |
19+ |
SSOT-6 |
200000 |
询价 |