FDC638中文资料仙童半导体数据手册PDF规格书

General Description

This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

特性 Features

· –4.5 A, –20 V.RDS(ON) = 48 mW @ VGS = –4.5 V

RDS(ON) = 65 mW @ VGS = –2.5 V

· Low gate charge (10 nC typical)

· High performance trench technology for extremely low RDS(ON)

· SuperSOT ™ –6 package: small footprint (72 smaller than standard SO-8; low profile (1mm thick)