FDC638P中文资料P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，48mΩ数据手册ONSEMI规格书

描述 Description

此N沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。这些器件非常适合电池供电应用：负载开关和功率管理、电池充电电路和DC/DC转换。

特性 Features

•–4.5 A, –20 V.RDS(ON) = 48 mΩ @ VGS = –4.5 VRDS(ON) = 65 mΩ @ VGS = –2.5 V
•低栅极电荷（10 nC，典型值）
• Low gate charge (10 nC typical)
• High performance trench technology for extremely low RDS(ON)
• SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)

应用 Application

• This product is general usage and suitable for many different applications.