N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 12 m

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=46A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =12mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：330.81 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 80A RDS(ON)

文件：2.21407 Mbytes 页数：5 Pages

BYCHIP

百域芯

30V N-Channel PowerTrench MOSFET

文件：117.27 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

30V N沟道PowerTrench® MOSFET

此N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。 •46 A，30 V。\n•RDS(on) = 12 mΩ @ VGS = 10 V\n•RDS(ON) = 14 mΩ @ VGS = 4.5 V\n•低栅极电荷\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体