丝印：FDS6612A；Package：SOP-8；30V N-Channel MOSFET

Features Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 8.4A RDS(ON)

文件：479.23 Kbytes 页数：7 Pages

UMW

友台半导体

EVALUATION KIT

INTRODUCING LX1710/1711 AUDIOMAX Thank you for your interest in the latest generation of AudioMAX products. The enclosed LXE1710 evaluation board is a fully functional mono amplifier designed to demonstrate the “new and improved” Switching Class-D Power Amplifier IC from Linfinity Microsemi. The

文件：339.7 Kbytes 页数：18 Pages

Microsemi

美高森美

Single N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and

文件：246.99 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Single N-Channel, Logic-Level, PowerTrench MOSFET

文件：164.38 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Single N-Channel, Logic-Level, PowerTrench MOSFET

文件：164.38 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel 20V (D-S) MOSFET

文件：1.00896 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

单 N 沟道，逻辑电平，Power Trench® MOSFET，30V，8.4A，22mΩ

该N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 这些器件非常适合于需要线路内低功率损耗和快速开关的低电压和电池供电应用。 •8.4 A，30 V\n•RDS(ON) = 22 mΩ @ VGS = 10 V\n•RDS(ON) = 30 mΩ @ VGS = 4.5 V\n•快速开关速度\n•低栅极电荷 \n•高性能沟道技术可实现极低的rDS(on)\n•高功率和高电流处理能力;

ONSEMI

安森美半导体