N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features · 12 A, 30 V RDS(ON)= 1

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

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ISC

无锡固电

30V N-Channel PowerTrench MOSFET

文件：118.78 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

30V N-Channel PowerTrench MOSFET

文件：118.78 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N 沟道，PowerTrench® MOSFET，30V，12A，14.5mΩ

此N沟道MOSFET采用飞兆半导体先进的PowerTrench工艺生产，该工艺专为最大限度地降低通态电阻并保持卓越的开关性能而量身定制。 •12 A, 30V\n•RDS(ON) = 14.5 mΩ @ VGS = 10V\n•RDS(ON) = 21.0 mΩ @ VGS = 4.5V\n•低栅极电荷 \n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体