2SJ529L-E说明书PDF资料批发采购瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ529L-E	文件：94.51 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching 文件：94.51 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ529S	文件：53.04 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching 文件：53.04 Kbytes 页数：9 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ529S	文件：94.51 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching 文件：94.51 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ529S	文件：45.39 Kbytes Page：1 Pages	Hight Speed Power Switching Features Low on-resistance RDS(on) = 0.12 typ. High speed switching 4V gate drive devices. 文件：45.39 Kbytes 页数：1 Pages	KEXIN 科信电子	KEXIN

更多2SJ529L-E供应商更新时间2025-12-14 10:19:00