2SJ553L-E中文资料下载供应商报价瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ553L-E	文件：96.13 Kbytes Page：9 Pages	Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. 文件：96.13 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ553S	文件：57.14 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. 文件：57.14 Kbytes 页数：9 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ553S	文件：96.13 Kbytes Page：9 Pages	Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. 文件：96.13 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ553STL-E	文件：96.13 Kbytes Page：9 Pages	Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. 文件：96.13 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

更多2SJ553L-E供应商更新时间2025-12-23 9:04:00