2SJ554规格书应用电路供应代理瑞萨RENESAS-114ic电子网

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零件型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ554	文件：55.04 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features •Lowon-resistanceRDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ554	文件：90.07 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
2SJ554	文件：300 bytes Page：1 Pages	Silicon P Channel MOS FET High Speed Power Switching; • Low on-resistance RDS(on)= 0.028Ω typ.\n• Low drive current.\n• 4V gate drive devices.\n• High speed switching.;	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ554	文件：300 bytes Page：1 Pages	Power MOSFETs;	RenesasRenesas Technology Corp 瑞萨瑞萨科技有限公司	Renesas
2SJ554-E	文件：90.07 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
2SJ554_15	文件：109.38 Kbytes Page：10 Pages	Silicon P Channel MOS FET	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS

更多2SJ554供应商更新时间2025-7-30 17:06:00