Silicon P Channel MOS FET High Speed Switching

Features • Low on-resistance RDS =2.8 Ω typ. (VGS = -10 V , ID = -50 mA) RDS =5.7 Ω typ. (VGS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK)

文件：27.12 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Switching

Features • Low on-resistance RDS =2.8 Ω typ. (VGS = -10 V , ID = -50 mA) RDS =5.7 Ω typ. (VGS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK)

文件：46.1 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Switching

• Low on-resistance\n• 4 V gate drive device.\n• Small package (CMPAK);

Renesas

瑞萨

TO263

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

TO-220-3

ON

上传：深圳市芯峰微电子科技有限公司