2SJ598-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ598isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=130mΩMAX.(VGS=–10V,ID=–6A) RDS(on)2=190mΩMAX.(VGS=–4.0V,ID=–6A) •LowCi

2SJ598-Z

Isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=130mΩ(Max)@VGS=-10V DESCRIPTION ·Solenoid,motorandlampdriver

2SJ598-Z

SWITCHING P-CHANNEL POWER MOS FET

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ598isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=130mΩMAX.(VGS=–10V,ID=–6A) RDS(on)2=190mΩMAX.(VGS=–4.0V,ID=–6A) •Low

2SJ598-Z

P-Channel MOSFET

2SJ598-Z-E1-AZ

P-Channel 60-V (D-S) MOSFET

2SJ598

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ598isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=130mΩMAX.(VGS=–10V,ID=–6A) RDS(on)2=190mΩMAX.(VGS=–4.0V,ID=–6A) •LowCi

2SJ598

P-Channel40V(D-S)MOSFET

2SJ598

MOSFieldEffectTransistor

2SJ598

SWITCHINGP-CHANNELPOWERMOSFET

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ598isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=130mΩMAX.(VGS=–10V,ID=–6A) RDS(on)2=190mΩMAX.(VGS=–4.0V,ID=–6A) •Low