MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 75 mΩ MAX. (VGS = −4.0 V, ID = −13 A) • Low input capacitance: Ciss = 1

文件：79.97 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 75 mΩ MAX. (VGS = −4.0 V, ID = −13 A) •

文件：215.12 Kbytes 页数：10 Pages

RENESAS

瑞萨

P-Channel MOSFET

■ Features ● VDS (V) =-60V ● ID =-25A ● RDS(ON)

文件：1.58426 Mbytes 页数：5 Pages

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 75 mΩ MAX. (VGS = −4.0 V, ID = −13 A) • Low input capacitance: Ciss = 1

文件：79.97 Kbytes 页数：8 Pages

NEC

瑞萨

MOS Field Effect Transistor

Features ● Low on-resistance RDS(on)1 = 48 m MAX. (VGS =-10 V, ID = -13A) RDS(on)2 = 75m MAX. (VGS = -4.0 V, ID =-13 A) ● Low Ciss: Ciss = 1900 pF TYP. ● Built-in gate protection diode

文件：49.7 Kbytes 页数：2 Pages

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 75 mΩ MAX. (VGS = −4.0 V, ID = −13 A) •

文件：215.12 Kbytes 页数：10 Pages

RENESAS

瑞萨