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2SJ606

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ606

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=15mMAX.(VGS=-10V,ID=-42A) RDS(on)2=23mMAX.(VGS=-4.0V,ID=-42A) ●LowCiss:Ciss=4800pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SJ606

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SJ606-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ606-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SJ606-Z

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SJ606-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ606-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ606-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-83A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SJ606-ZJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

详细参数

  • 型号:

    2SJ606-AZ

  • 制造商:

    Renesas Electronics

  • 功能描述:

    Pch -60V -83A 15m@10V TO220AB

  • 功能描述:

    Pch -60V -83A 15m@10V TO220AB Cut Tape

  • 功能描述:

    Pch -60V -83A 15m@10V TO220AB Bulk

  • 制造商:

    Renesas Electronics Corporation

  • 功能描述:

    Pch MOSFET,60V,83A,12m ohm,TO-220AB

  • 制造商:

    Renesas

  • 功能描述:

    Trans MOSFET P-CH 60V 83A 3-Pin(3+Tab) TO-220AB

供应商型号品牌批号封装库存备注价格
RENESAS
24+
TO-220
5000
只做原装公司现货
询价
RENESAS/瑞萨
23+
TO-220
50000
全新原装正品现货,支持订货
询价
RENESAS/瑞萨
23+
TO-220
50000
全新原装正品现货,支持订货
询价
RENESAS
15+
TO-220
182
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
RENESAS/瑞萨
24+
NA/
590
优势代理渠道,原装正品,可全系列订货开增值税票
询价
RENESAS
2023+
TO-220
8800
正品渠道现货 终端可提供BOM表配单。
询价
RENESAS
24+
con
35960
查现货到京北通宇商城
询价
RENESAS
24+
con
35960
查现货到京北通宇商城
询价
Renesas/瑞萨
两年内
NA
261217
实单价格可谈
询价
RENESAS
24+
TO-220
10000
公司现货
询价
更多2SJ606-AZ供应商 更新时间2025-5-24 10:20:00