2SJ607数据手册供应代理瑞萨NEC-114ic电子网

首页 >2SJ607>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ607	文件：78.57 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = 文件：78.57 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
2SJ607	文件：213.66 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) 文件：213.66 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SJ607	文件：50.09 Kbytes Page：2 Pages	MOS Field Effect Transistor Features ● Low on-resistance RDS(on)1 =11 mΩ MAX. (VGS =-10 V, ID = -42A) RDS(on)2 = 16 mΩ MAX. (VGS = -4.0 V, ID =-42 A) ● Low Ciss: Ciss = 7500 pF TYP. ● Built-in gate protection diode 文件：50.09 Kbytes 页数：2 Pages	KEXIN 科信电子	KEXIN
2SJ607	文件：300 bytes Page：1 Pages	Power MOSFETs-Power MOSFETs for Automotive	Renesas 瑞萨	Renesas
2SJ607-S	文件：213.66 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) 文件：213.66 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SJ607-S	文件：78.57 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = 文件：78.57 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
2SJ607-Z	文件：78.57 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = 文件：78.57 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
2SJ607-Z	文件：213.66 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) 文件：213.66 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SJ607-ZJ	文件：213.66 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) 文件：213.66 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SJ607-ZJ	文件：78.57 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = 文件：78.57 Kbytes 页数：8 Pages	NEC 瑞萨	NEC

技术参数

RDS (ON) (mohm) max. @10V or 8V：
11
Downloadable：
SPICE
Ciss (pF) typ.：
7500
Package Type：
MP-25/TO-220AB
Vgs (off) (V) max.：
-2.5
Nch/Pch：
Pch
VGSS (V)：
20
Number of Channels：
Single
Pch (W)：
160
Automotive：
YES
Application：
Low Voltage General Switching
VDSS (V) max.：
-60
Mounting Type：
Through Hole
ID (A)：
-83
QG (nC) typ.：
188
RDS (ON) (mohm) max. @4V or 4.5V：
16

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	2SJ607	RENESAS/瑞萨	25+	TO-220	20300	RENESAS/瑞萨原装特价2SJ607即刻询购立享优惠#长期有货	询价
深圳市向鸿伟业电子有限公司	2SJ607	NEC	2405+	TO-263	4475	只做原装正品渠道订货	询价
深圳市汇莱威科技有限公司	2SJ607	NEC	24+	TO-262	503123	免费送样原盒原包现货一手渠道联系	询价
深圳市一线半导体有限公司	2SJ607	NEC	24+	SOT263	7250		询价
深圳市豪迈兴电子有限公司	2SJ607	NEC	24+		8858	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市勤思达科技有限公司	2SJ607		12+	TO-263	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市赛芯源科技有限公司	2SJ607	NEC	18+	TO-263	41200	原装正品,现货特价	询价
深圳市亿智腾科技有限公司	2SJ607	NEC	24+		6540	原装现货/欢迎来电咨询	询价
深圳市宇创芯科技有限公司	2SJ607	NEC	24+	TO-220	9600	原装现货,优势供应,支持实单!	询价
深圳市威尔健半导体有限公司	2SJ607	NEC	23+	TO220	50000	全新原装正品现货,支持订货	询价

更多2SJ607供应商更新时间2025-10-6 9:03:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号