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2SJ607-Z

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SJ607-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ607-ZJ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SJ607-ZJ

P-Channel MOSFET

■Features ●VDS(V)=-60V ●ID=-83A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SJ607-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ607

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ607

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=11mΩMAX.(VGS=-10V,ID=-42A) RDS(on)2=16mΩMAX.(VGS=-4.0V,ID=-42A) ●LowCiss:Ciss=7500pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SJ607

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SJ607-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ607-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

详细参数

  • 型号:

    2SJ607-Z

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR

供应商型号品牌批号封装库存备注价格
NEC
23+
TO-263
35890
询价
NEC
24+
TO263-3
674
询价
NEC
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NEC
2003+
TO263-3
659
原装现货海量库存欢迎咨询
询价
NEC
24+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
NEC
24+
6540
原装现货/欢迎来电咨询
询价
RENESAS/瑞萨
2022+
TO-263
50000
原厂代理 终端免费提供样品
询价
RENESAS/瑞萨
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
询价
NEC
2402+
TO263-3
8324
原装正品!实单价优!
询价
RENESAS
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多2SJ607-Z供应商 更新时间2025-5-21 9:01:00