MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ624 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V drive

文件：71.26 Kbytes 页数：8 Pages

NEC

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丝印：XH；Package：SC-96；MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ624 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V

文件：205.93 Kbytes 页数：10 Pages

RENESAS

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Pch Single Power Mosfet -20V -4.5A 54Mohm Tmm/Sc-96

The 2SJ624 is a Pch Single Power Mosfet -20V -4.5A 54Mohm Tmm/Sc-96. • 1.8 V drive available\n• Low on-state resistance RDS(on)1 = 54 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 71 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A) RDS(on)3 = 108 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日2SJ624 Data Sheet;

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The 2SJ624 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V drive

文件：211.89 Kbytes 页数：10 Pages

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P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：814.16 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

文件：206.53 Kbytes 页数：10 Pages

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