TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-?-MOSV)

Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON)= 63 mΩ(typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.) • Low leakage current: IDSS= −100 μA (max) (VDS= −100 V) • Enhancement model:

文件：225.53 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Switching Regulator and DC-DC Converter Applications Motor Drive Applications

文件：185.76 Kbytes 页数：6 Pages

TOSHIBA

东芝

Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications

文件：191.51 Kbytes 页数：6 Pages

TOSHIBA

东芝

Power MOSFET (P-ch single)

Polarity：P-ch\nGeneration：L²-π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -18 A \nPower Dissipation PD 125 W \nDrain-Source voltage VDSS -100 V ;

Toshiba

东芝

Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications

文件：191.51 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator and DC-DC Converter Applications Motor Drive Applications

文件：185.76 Kbytes 页数：6 Pages

TOSHIBA

东芝